sfh612a/ sfh655a document number 83667 rev. 1.4, 26-oct-04 vishay semiconductors www.vishay.com 1 i179057 e c a c 1 2 3 4 pb p b -free e3 optocoupler, photodarlington output features ? high isolation test voltage 5300 v rms standard plastic dip-4 package lead-free component component in accordance to rohs 2002/95/ec and weee 2002/96/ec agency approvals ul - file no. e52744 system code h or j bsi iec60950 iec60065 description the sfh612a and sfh655a are optically coupled isolators with a gallium arse nide infrared led and a silicon photodarlin gton detector. switching can be achieved while maintaining a high degree of isolation between driving and load circuits. these optocou- plers can be used to replace reed and mercury relays with advantages of long life, high speed switching and elimination of magnetic fields. order information for additional information on t he available options refer to option information. absolute maximum ratings t amb = 25 c, unless otherwise specified stresses in excess of the absolute maximum ratings can cause pe rmanent damage to the device. func tional operation of the device is not implied at these or any other condition s in excess of those given in the operatio nal sections of this document. exposure to absolute maximum rating for extended periods of t he time can adversely affect reliability. input part remarks sfh612a ctr > 200 %, dip-4 sfh655a ctr > 600 %, dip-4 SFH655A-X009 ctr > 600 %, smd-4 (option 9) parameter test condition symbol value unit peak reverse voltage v rm 6.0 v forward continuous current i f 60 ma surge forward current t p 10 si fsm 2.5 a derate linearly from 25 c 1.33 mw/c power dissipation p diss 100 mw
www.vishay.com 2 document number 83667 rev. 1.4, 26-oct-04 sfh612a/ sfh655a vishay semiconductors output coupler electrical characteristics t amb = 25 c, unless otherwise specified minimum and maximum values are testing require ments. typical values are c haracteristics of the device and are the result of eng ineering evaluation. typical values are for information only and are not part of the testing requirements. input output parameter test condition symbol value unit collector-emitter breakdown voltage bv ceo 55 v emitter-collector breakdown voltage bv eco 6.0 v collector (load) current i c 125 ma derate linearly from 25 c 2.00 mw/c power dissipation p diss 150 mw parameter test condition symbol value unit derate linearly from 25 c 3.33 mw/c total power dissipation p tot 250 mw isolation test voltage between input and output, climate acc. to iec 60068-1:1988 t = 1.0 s v iso 5300 v rms creepage distance 7.0 mm clearance 7.0 mm comparative tracking index acc. to din iec 112/vde 0303, part 1:06-84 175 isolation resistance v io = 500 v, t amb = 25 c r io 10 12 ? v io = 500 v, t amb = 100 c r io 10 11 ? storage temperature range t stg - 55 to + 150 c operating temperature range t amb - 55 to + 100 c soldering temperature max. 10 s, dip soldering: distance to seating plane 1.5 mm 260 c parameter test condition symbol min ty p. max unit forward voltage i f = 10 ma v f 1.15 1.5 v reverse current v r = 6.0 v i r 0.02 10 a capacitance v r = 0, f = 1.0 mhz c o 14 pf parameter test condition symbol min ty p. max unit collector-emitter breakdown voltage i ce = 100 abv ceo 55 v emitter-collector breakdown voltage i ec = 10 abv eco 6.0 v collector-emitter dark current v ce = 40 v i ceo 12 400 na collector-emitter capacitance v ce = 0 v, f=1.0 mhz c ce 13.5 pf
sfh612a/ sfh655a document number 83667 rev. 1.4, 26-oct-04 vishay semiconductors www.vishay.com 3 coupler current transfer ratio switching characteristics typical characteris tics (tamb = 25 c unless otherwise specified) parameter test condition part symbol min ty p. max unit collector-emitter saturation voltage i f = 1.0 ma, i c = 2.0 ma sfh612a v cesat 1.0 v i f = 20 ma, i c = 5.0 ma sfh655a v cesat 1.0 v coupling capacitance v i-o = 0 v, f = 1.0 mhz c c 0.45 pf parameter test condition part symbol min ty p. max unit current transfer ratio i f = 1.0 ma, v ce = 2.0 v sfh612a ctr 200 % sfh655a ctr 600 % parameter test condition part symbol min ty p. max unit turn-on time (fig. 10, test circuit 1) v cc = 10 v, i c = 2.0 ma, r l = 100 ? sfh612a t on 16 s turn-off time (fig. 10, test circuit 1) v cc = 10 v, i c = 2.0 ma, r l = 100 ? sfh612a t off 15 s rise time (fig. 10, test circuit 1) v cc = 10 v, i c = 2.0 ma, r l = 100 ? sfh612a t r 14 s fall time (fig. 10, test circuit 1) v cc = 10 v, i c = 2.0 ma, r l = 100 ? sfh612a t f 14 s turn-on time (fig. 11, test circuit 2) v cc = 2.0 v, i c = 10 ma, r l = 100 ? sfh655a t on 31 s turn-off time (fig. 11, test circuit 2) v cc = 2.0 v, i c = 10 ma, r l = 100 ? sfh655a t off 55 s rise time (fig. 11, test circuit 2) v cc = 2.0 v, i c = 10 ma, r l = 100 ? sfh655a t r 27 250 s fall time (fig. 11, test circuit 2) v cc = 2.0 v, i c = 10 ma, r l = 100 ? sfh655a t f 56 200 s figure 1. forward voltage vs. forward current isfh612a_01 0.01 0.10 1.00 10.00 100.00 1.5 1.4 1.3 1.2 1.1 1.0 0.9 0.8 0.7 forward current, i f (ma) forward voltage (v) 25c C40c 75c 0c figure 2.colletoremitteraturationvoltages.temperature isfh612a_02 temperature, t a (c) v cesat (v) C40 C20 0 20 40 60 80 100 1.00 0.95 0.90 0.85 0.80 0.75 0.70 0.65 0.60 0.55 0.50 i f = 20 ma, i c = 5.0 ma
www.vishay.com 4 document number 83667 rev. 1.4, 26-oct-04 sfh612a/ sfh655a vishay semiconductors figure 3. normalized ctr vs. temperature figure 4. normalized ctr vs. forward current figure 5. collector current vs. collector emitter voltage isfh612a_03 temperature, t a (c) normalized ctr C40 C20 0 20 40 60 80 100 1.2 1.0 0.8 0.6 i f = 1.0 ma, v ce = 2.0 v isfh612a_04 0.01 0.1 1.0 10 100 1.80 1.60 1.40 1.20 1.00 0.80 0.60 0.40 0.20 0.00 normalized ctr forward current, i f (ma) i = 1.0 ma, v ce = 2.0 v, f isfh612a_05 012345678910 v ce (v) i c (ma) 1000.0 100.0 10.0 1.0 0.1 i f =10 ma i f =5 ma i f =2 ma i f =0.5 ma i f =1.5 ma i f =1 ma fi 6.ccs.cemiaai va fi 7.cemiacs.cemi vama fi 8.ihiims.asis isfh612a_06 v cesat (v) i c (ma) 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 120 100 80 60 40 20 0 i f =10 ma i f =5 ma i f =1 ma i f =0.5 ma isfh612a_07 0102030405060 10 4 10 3 10 2 10 1.0 0.1 i ceo (na) 75 c 50 c 25 c 0c 100 c v ce (v) C25 c C25 c isfh612a_08 load resistance, r l (ohm) time switching, s 10 2 10 3 10 4 10 3 10 2 10 t on t rise t fall t off i c = 2.0 ma, v cc = 10 v (sfh612a)
sfh612a/ sfh655a document number 83667 rev. 1.4, 26-oct-04 vishay semiconductors www.vishay.com 5 figure 9. switching time vs. load resistor figure 10. switching time test circuit and waveforms figure 11. switching time test circuit and waveforms isfh612a_09 10 2 10 3 10 4 10 10 2 10 0 t fall t off t on t rise load resistance, r l ( ? ) time switching, s i c = 10 ma, v ce = 2.0 v (sfh655a) isfh612a_10 10% 90% t on t off t r t f i f v o circuit 1 waveform 1 v cc v out i f r e isfh612a_11 10% 90% input pulse output pulse t r t on t f v ce v cc i f r l circuit 2 waveform 2 t off
www.vishay.com 6 document number 83667 rev. 1.4, 26-oct-04 sfh612a/ sfh655a vishay semiconductors package dimensions in inches (mm) i178027 .255 (6.48) .268 (6.81) 1 2 4 3 .179 (4.55) .190 (4.83) pin one id .030 (.76) .045 (1.14) 4 typ. .100 (2.54) .130 (3.30) .150 (3.81) .020 (.508 ) .035 (.89) 10 3C9 .018 (.46) .022 (.56) .008 (.20) .012 (.30) .031 (.79) typ. .050 (1.27) typ. .300 (7.62) typ. .110 (2.79) .130 (3.30) .230 (5.84) .250 (6.35) .050 (1.27) iso method a min. .315 (8.00) .020 (.51) .040 (1.02) .300 (7.62) ref. .375 (9.53) .395 (10.03) .012 (.30) typ. .0040 (.102) .0098 (.249) 15 max. 18449 option 9
sfh612a/ sfh655a document number 83667 rev. 1.4, 26-oct-04 vishay semiconductors www.vishay.com 7 ozone depleting subst ances policy statement it is the policy of vishay semiconductor gmbh to 1. meet all present and future national and international statutory requirements. 2. regularly and continuously improve the performanc e of our products, processes, distribution and operatingsystems with respect to their impact on the hea lth and safety of our empl oyees and the public, as well as their impact on the environment. it is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (odss). the montreal protocol (1987) and its london amendments (1990) intend to severely restrict the use of odss and forbid their use within the next ten years. various national and international initiatives are pressing for an earlier ban on these substances. vishay semiconductor gmbh has been able to use its policy of continuous improvements to eliminate the use of odss listed in the following documents. 1. annex a, b and list of transitional substances of the montreal protocol and the london amendments respectively 2. class i and ii ozone depleting substances in the cl ean air act amendments of 1990 by the environmental protection agency (epa) in the usa 3. council decision 88/540/eec and 91/690/eec annex a, b and c (transitional substances) respectively. vishay semiconductor gmbh can certify that our semi conductors are not manufactured with ozone depleting substances and do not contain such substances. we reserve the right to make changes to improve technical design and may do so without further notice. parameters can vary in different applications. all operating parameters must be validated for each customer application by the customer. should the buyer use vishay semiconductors products for any unintended or unauthorized application, the buyer shall indemnify vishay semiconductors against all claims, costs, damages, and expenses, arising out of , directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. vishay semiconductor gmbh, p.o.b. 3535, d-74025 heilbronn, germany telephone: 49 (0)7131 67 2831, fax number: 49 (0)7131 67 2423
|
